tip 115 tip 116 tip 117 pnp epitaxial silicon darlington transistors features maximum ratings symbol rating rating unit v ceo collecto r - emitter voltage ti p 115 ti p 116 ti p 117 60 80 100 v v cbo collecto r - base voltage ti p 115 ti p 116 ti p 117 60 80 100 v v ebo emitter - base voltage 5.0 v i c collector current ( d c ) 2 .0 a i cp collector current ( pulse ) 4.0 a i b base current ( dc ) 50 m a p c collector d issipation @t a =2 5 o c collector d issipation @t c =2 5 o c 2.0 50 w w t j , junction temperature - 55 to +150 o c t stg storage temperature - 55 to +150 o c electrical characteristics @ 2 5 o c unless otherwise specified symbl parameter min max units off characteristics v ceo(sus) coll e cto r - emitter sustaining voltage (i c =30madc, i b =0) ti p 115 ti p 116 ti p 117 60 80 100 --- --- --- vdc i ce o collector cut - off current (v ce = 30 vdc, i b =0) tip115 (v ce = 40 vdc, i b =0) tip116 (v ce = 50 vdc, i b =0) tip117 --- --- --- 2.0 2.0 2.0 madc i c bo collector cut - off current (v cb = 60vdc, i e =0) tip115 (v cb =80vdc, i e =0) tip116 (v cb =100vdc, i e =0) tip117 --- --- --- 1. 0 1. 0 1.0 madc i ebo emitter cu t - off current ( v be = 5. 0vdc, i c =0) --- 2.0 madc on characteristics h fe(1) dc current gain (i c =1 . 0 adc, v ce =4.0vdc) ( i c = 2. 0 adc, v ce =4.0vdc) 1000 500 --- --- ---- v ce(sat) collecto r - emitter saturation voltage ( i c = 2. 0 adc, i b = 8.0 m adc) --- 2.5 vdc v be(on) base - emitter on voltage (i c = 2 . 0 adc, v ce =4.0adc) --- 2.8 vdc c ob output capacitance ( v cb =10v, i e =0, f=0.1mh z ) --- 200 pf to-220 g r b q h u l d c j k a f s t n v ww w . mccsemi .com r 11 0 k ?? r 20. 6 k ?? e qui v a l e nt cir c u i t b e c r1 r2 inches mm
a .595 .620 15.11 15.75 b .380 .405 9.65 10.29 u ------ .050 ----- 1.27 c .160 .190 4.06 4.82 d .025 .035 0.64 0.89 f .142 .147 3.61 3.73 g .190 .210 4.83 5.33 h .110 .130 2.79 3.30 j .018 .025 0.46 0.64 k .500 .562 12.70 14.27 l .045 .060 1.14 1.52 q .100 .120 2.54 3.04 r .080 .110 2.04 2.79 s .045 .055 1.14 1.39 t .235 .255 5.97 6.48 2.collector 3.emitter 1.base revision: 3 2008 /01/01
omponents 20736 marilla street chatsworth !"# $
% !"# mcc tm micro commercial components high dc current gain : h fe =1000 @ v ce =4.0v, i c =1.0a(min.) low collector-emitter saturation voltage complementary to tip110/111/112 notes:1.high temperature solder exemption applied, see eu directive annex 7. ? lead free finish/rohs compliant(note 1) ("p" suffix designates rohs compliant. see ordering information) ? case material: molded plastic. ul flammability classificationrating94v-0 and msl rating 1 1 of 1
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